Professor ZHANG Yuantao
New Century Outstanding Talents of the Ministry of Education
Deputy Director of State Key Laboratory of Integrated Optoelectronics, Jilin University Region
Address: 2699 Qianjin Street, Changchun 130012, China
Tel: (+86) 431-85168241-8261
Prof. ZHANG Yuantao’s research fields include Nitride semiconductor materials and devices, Oxide semiconductor materials and devices, and Novel optoelectronic devices combining wide band-gap semiconductor materials with other materials such as graphene and inorganic perovskites. He has published more than 150 papers in important academic journals such as Advanced Functional Materials, Nano Letters, Advanced Science, ACS photonics, Applied Physics Letters, among which 35 papers have been published as the first author or corresponding author in the past five years (2016-2020). Besides, he authorized 10 invention patents and made over 20 invited reports at important domestic and international academic conferences. He presided General Project of National Natural Science Foundation of China, New Century Talent Project of the Ministry of Education, and Major Science and Technology Research Project of Jilin Province. And as a sub-project leader, he participated in two National Key Research and Development Projects and served as an academic backbone participating in two State Key Programs of the National Natural Science Foundation of China. Moreover, he received many awards including First Prize of Technology Invention Award of Jilin Province (ranking first, 2020), High-Level Innovative and Entrepreneurial Talents of Jiangsu Province (2019), New Century Outstanding Talents of the Ministry of Education (2013), Research Fellowship of Japan Society for the Promotion of Science (2010), Humboldt Fellowship of the German Humboldt Foundation (2006).
2000.09-2005.06 Doctor and Master of Science, College of Electronic Science and Engineering, Jilin University
1996.09-2000.06 Bachelor of Science, Department of Electronic Science, Jilin University
2019.06- Now Deputy Director of State Key Laboratory of Integrated Optoelectronics, Jilin University Region
2014.09- Now Professor, College of Electronic Science and Engineering, Jilin University
2008.09- 2014.09 Associate Professor, College of Electronic Science and Engineering, Jilin University
2005.09- 2008.09 Lecturer, College of Electronic Science and Engineering, Jilin University
2010.04- 2012.04 Special Researcher for Foreigners of Japan Society for the Promotion of Science, Institute of Metal Materials, Tohoku University
2008.08- 2010.03 Researcher of CREST, Japan Science and Technology Agency, Institute of Metal Materials, Tohoku University
2006.02- 2007.02 Humboldt Scholar, Institute of Applied Physics, Dresden University of Technology
Member of the Wide Band Gap Semiconductor Professional Committee of China Nonferrous Metals Society
Distinguished Professor, School of Physics, Zhengzhou University
Technical Director of Jiangsu Hongjia Electronic Technology Co., Ltd.
2020.11 First Prize of Technology Invention Award of Jilin Province (ranking first)
2013.10 New Century Outstanding Talents of the Ministry of Education
2010.04 Research Fellowship of Japan Society for the Promotion of Science
2006.02 Humboldt Fellowship of the German Humboldt Foundation
2004.11 Second Prize of Jilin Province Science and Technology Progress Award
1. Nitride semiconductor materials and devices: epitaxial growth of the nitride semiconductor materials (GaN, AlN, BN, InN, InGaN, AlGaN, BGaN, BAlN, and quantum well structures composed of the above materials) using a multimillion-dollar AIXTRON CCS 3×2" MOCVD equipment; study of the physical properties of nitride materials; researching on nitride optoelectronic devices (LED, laser, etc.) and electronic devices (high electron mobility transistors, etc.).
2. Oxide semiconductor materials and devices: epitaxial growth oxide semiconductor films (Ga2O3, ZnO, MgZnO, InGaZnO, etc.) on different substrates using an independently designed oxide MOCVD system, and developing oxide heterojunction optoelectronic devices and power electronic devices.
3. Novel optoelectronic devices: researching on the combination of graphene and inorganic perovskite and other materials with wide band-gap semiconductor materials to build novel optoelectronic devices.
Semiconductor materials and devices
J. Jiang, Y. Zhang*, C. Chi, Y. Long, X. Han, B. Wu, B. Zhang, G. Du, Exciton localization and ultralow onset ultraviolet emission in ZnO nanopencils-based heterojunction diodes, Optics Express, 24 (2016) 20938-20946.
J. Jiang, Y. Zhang*, C. Chi, Z. Shi, L. Yan, P. Li, B. Zhang, G. Du, Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode, Applied Physics Letters, 108 (2016) 063505.
J. Jiang, Y. Zhang*, C. Chi, F. Yang, P. Li, D. Zhao, B. Zhang, G. Du, Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution, Applied Surface Science, 360 (2016) 772-776.
B. Wu, S. Zhuang, C. Chi, Z. Shi, J. Jiang, X. Dong, W. Li, Y. Zhang*, B. Zhang*, G. Du, The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices, Physical Chemistry Chemical Physics, 18 (2016) 5614-5621.
G. Deng, Y. Zhang*, Z. Huang, L. Yan, P. Li, X. Han, Y. Yu, L. Chen, D. Zhao, G. Du, The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer, CrystEngComm, 19 (2017) 4330-4337.
Z. Shi, Y. Li, Y. Zhang*, Y. Chen, X. Li*, D. Wu, T. Xu, C. Shan*, G. Du, High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure, Nano Letters, 17 (2017) 313-321.
G. Deng, Y. Zhang*, Y. Yu, L. Yan, P. Li, X. Han, L. Chen, D. Zhao, G. Du, Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio, Applied Physics Letters, 112 (2018) 151607.
L. Yan, Y. Zhang*, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, J. Song, Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition, Applied Physics Letters, 112 (2018) 182104.
G. Deng, Y. Zhang*, Y. Yu, X. Han, Y. Wang, Z. Shi, X. Dong, B. Zhang, G. Du, Y. Liu, High-Performance Ultraviolet Light-Emitting Diodes Using n-ZnO/p-hBN/p-GaN Contact Heterojunctions, ACS Applied Materials & Interfaces, 12 (2020) 6788-6792.
F. Liu, Y. Yu, Y. Zhang*, X. Rong, T. Wang, X. Zheng, B. Sheng, L. Yang, J. Wei, X. Wang, X. Li, X. Yang, F. Xu, Z. Qin, Z. Zhang, B. Shen, X. Wang*, Hexagonal BN-Assisted Epitaxy of Strain Released GaN Films for True Green Light-Emitting Diodes, Advanced Science, 7 (2020) 2000917.
F. Liu, Z. Zhang, X. Rong, Y. Yu, T. Wang, B. Sheng, J. Wei, S. Zhou, X. Yang, F. Xu, Z. Qin, Y. Zhang*, K. Liu*, B. Shen, X. Wang*, Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes, Advanced Functional Materials, 30 (2020) 2001283.
Y. Zhang*, G. Deng, Y. Yu, Y. Wang, D. Zhao, Z. Shi, B. Zhang, X. Li*, Demonstration of N-Polar III-Nitride Tunnel Junction LED, ACS Photonics, 7 (2020) 1723-1728.
1. Time Period：2021.01-2021.12
Project Name: Study on the Fabrication of Zero-Polarization Field InAlN-based LEDs Based on Polar Plane
Funding Source: General Project of National Natural Science Foundation of China
Amount: 730,000 RMB
2. Time Period：2020.04-2021.12
Project Name: Development of Zero Polarization Electric Field LED Devices
Funding Source: Technology Development Project of Huawei Terminal Co. Ltd
Amount: 2,000,000 RMB
3. Time Period：2020.01-2022.12
Project Name: Research on the Epitaxial Growth of AlGaN-based Deep Ultraviolet Quantum Wells Structure and Its Polarization Effect
Funding Source: International Scientific and Technological Cooperation Project of Jilin Province
Amount: 200,000 RMB
4. Time Period：2018.01-2021.12
Project Name: Research on High-Quality GaN Grown on 2D Material Transition Layer
Funding Source: State Key Program of National Natural Science Foundation of China
Amount: 600,000 RMB
5. Time Period：2016.07-2020.12
Project Name: Research on Large Mismatch, Weak Segregation InGaN Epitaxial Growth and High Luminous Efficiency Green Quantum Well
Funding Source: National Key Research and Development Program
Amount: 1,000,000 RMB
6. Time Period：2016.07-2021.12
Project Name: Research on the Key Materials and Technology of Blue Semiconductor Lasers for Laser Display
Amount: 700,000 RMB
7. Time Period：2016.01-2018.12
Project Name: Study on the Epitaxial Growth and Polarization Effects of High-Quality Green InGaN/GaN Quantum Wells
Funding Source: Natural Science Foundation of Jilin Province
Amount: 100,000 RMB
8. Time Period：2017.01-2020.12
Project Name: Research on AlGaN-based Ultraviolet LED with Vertical Structure Resonator
Amount: 650,000 RMB
9. Time Period：2013.01-2015.12
Project Name: Epitaxial Growth Technology of White LED Based on SiC Substrate
Funding Source: Major Science and Technology Research Project of Jilin Province
Amount: 800,000 RMB
Research Groups of the College