DENG Gaoqiang

Lecturer DENG Gaoqiang

Address: 2699 Qianjin Street, Changchun 130012, China

Tel: (+86) 431-85168241-8261

Email: denggq@jlu.edu.cn

Dr. DENG Gaoqiang’s research focus on growth, fabrication, and physics of nitride semiconductor materials and devices. He has published over 20 SCI retrieval papers in international journals including ACS Photonics, ACS Applied Materials & Interfaces, Applied Physics Letters, etc. Besides, he authorized 3 China’s national invention patents. In addition, he obtained First Prize of Technology Invention Award of Jilin Province (Fourth person, 2020).

  Education Experience

        2013.09-2019.06   Doctor of Science, College of Electronic Science and Engineering, Jilin University

        2009.09-2013.07   Bachelor of Engineering, College of Mechanical and Electronic Engineering, East China University of Technology

Working Experience

2020.07- Now     Lecturer, College of Electronic Science and Engineering, Jilin University

Honors

2020.11   First Prize of Technology Invention Award of Jilin Province (Fourth person) 

Research Areas

1. Nitride semiconductor materials: Use the advanced AIXTRON CCS 3×2″ MOCVD system to grow GaN, AlN, InN and their alloys (InGaN, AlGaN, AlInN, etc.) and study their physical properties.

2. Nitride semiconductor light-emitting devices and electronic devices: Light-emitting diodes, laser diodes, high electron mobility transistors, etc.

Research Interests

Nitride semiconductor materials and devices

Ten Selected Publications

• G. Deng, Y. Zhang*, Y. Yu, X. Han, Y. Wang, Z. Shi, X. Dong, B. Zhang, G. Du, Y. Liu, High-performance ultraviolet light-emitting diodes using n-ZnO/p-hBN/p-GaN contact heterojunctions, ACS Applied Materials & Interfaces, 2020, 12, 6788-6792.

• Y. Zhang*, G. Deng, Y. Yu, Y. Wang, D. Zhao, Z. Shi, B. Zhang, X. Li*, Demonstration of N-polar III-nitride tunnel junction LED, ACS Photonics, 2020, 7, 1723-1728.

• G. Deng, Y. Zhang*, P. Li, Y. Yu, X. Han, L. Chen, L. Yan, X. Dong, D. Zhao, G. Du, Design and fabrication of double AlGaN/GaN distributed Bragg reflector stack mirror for the application of GaN-based optoelectronic devices, Journal of Materials Science: Materials in Electronics, 2019, 30, 3277-3282.

•  G. Deng, Y. Zhang*, Y. Yu, L. Yan, P. Li, X. Han, L. Chen, D. Zhao, G. Du, Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio, Applied Physics Letters, 2018, 112, 151607.

•  G. Deng, Y. Zhang*, Y. Yu, L. Yan, P. Li, X. Han, L. Chen, D. Zhao, G. Du, Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate, Superlattices and Microstructures, 2018, 116, 1-8.

•  G. Deng, Y. Zhang*, Y. Yu, L. Yan, P. Li, X. Han, L. Chen, D. Zhao, G. Du, Simulation and fabrication of N-polar GaN-based blue-green light-emitting diodes with p-type AlGaN electron blocking layer, Journal of Materials Science: Materials in Electronics, 2018, 29, 9321-9325.

• G. Deng, Y. Zhang*, Y. Yu, Z. Huang, X. Han, L. Chen, L. Yan, P. Li, X. Dong, D. Zhao, G. Du, Significantly reduced in-plane tensile stress of GaN films grown on SiC substrates by using graded AlGaN buffer and SiNx interlayer, Superlattices and Microstructures, 2018, 122, 74-79.G. 

• Deng, Y. Zhang*, Z. Huang, L. Yan, P. Li, X. Han, Y. Yu, L. Chen, D. Zhao, G. Du, The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer, CrystEngComm, 2017, 19, 4330-4337.

• G. Deng, Y. Zhang*, Z. Huang, B. Li, B. Zhang, G. Du, Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices, Vacuum, 2016, 130, 119-123.

• L. Yan, Y. Zhang*, X. Han, G. Deng, P. Li, Y. Yu, L. Chen, X. Li, J. Song, Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition, Applied Physics Letters, 2018, 112, 182104.